VISHAY · FETs & Power MOSFETs · MPN SI4186DY-T1-GE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 90nC@10V |
| Current - Continuous Drain(Id) | 35.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 6W |
| Reverse Transfer Capacitance (Crss@Vds) | 453pF |
| RDS(on) | 2.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.63nF |
| Type | N-Channel |
N-Channel 20V 35.8A 6W Surface Mount SO-8