VISHAY SI4174DY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4174DY-T1-GE3

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)205pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)985pF
TypeN-Channel

Technical details

N-Channel 30V 17A 5W Surface Mount SOIC-8

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