VISHAY · FETs & Power MOSFETs · MPN SI4162DY-T1-GE3
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| Gate Charge(Qg) | 8.8nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 19.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 7.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.155nF |
N-Channel 30V 19.3A 3.2W Surface Mount SO-8