VISHAY · FETs & Power MOSFETs · MPN SI4160DY-T1-GE3
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| Gate Charge(Qg) | 54nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 406pF |
| Current - Continuous Drain(Id) | 25.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 5.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 168pF |
| RDS(on) | 6.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.071nF |
| Type | N-Channel |
N-Channel 30V 25.4A 5.7W Surface Mount SO-8