VISHAY · FETs & Power MOSFETs · MPN SI4156DY-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
N-Channel 30V 3.8W Surface Mount SO-8