VISHAY · FETs & Power MOSFETs · MPN SI4155DY-T1-GE3
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| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 10.2A;13.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2.5W;4.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 212pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.87nF |
30V 1.2V 15mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS