VISHAY · FETs & Power MOSFETs · MPN SI4153DY-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 31nC@4.5V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 19.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 5.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 390pF |
| RDS(on) | 15mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.6nF |
| Type | P-Channel |
30V 19.3A 2.5V 5.6W 15mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS