VISHAY · FETs & Power MOSFETs · MPN SI4151DY-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 87nC@10V |
| Current - Continuous Drain(Id) | 15.2A;20.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.1W;5.6W |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.25nF |
P-Channel 30V 15.2A 20.5A 3.1W 5.6W Surface Mount SO-8