VISHAY · FETs & Power MOSFETs · MPN SI4143DY-T1-GE3
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| Gate Charge(Qg) | 167nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 25.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 710pF |
| RDS(on) | 6.2mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.63nF |
30V 25.3A 2.9W 6.2mΩ@10V 1 P-Channel SO-8 Single FETs, MOSFETs RoHS