VISHAY SI4134DY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4134DY-T1-GE3

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Specifications

Gate Charge(Qg)15.4nC@10V;7.9nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)187pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)11.5mΩ@10V;14.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)846pF
TypeN-Channel

Technical details

N-Channel 30V 14A 5W Surface Mount SO-8

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