VISHAY SI4134DY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI4134DY-T1-E3

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Specifications

Gate Charge(Qg)7.3nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)187pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)72pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)846pF
TypeN-Channel

Technical details

N-Channel 30V 14A 2.5W Surface Mount SO-8

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