VISHAY · FETs & Power MOSFETs · MPN SI4126DY-T1-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 760pF |
| Current - Continuous Drain(Id) | 39A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 285pF |
| RDS(on) | 3.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.405nF |
| Type | N-Channel |
30V 39A 2.5V 5W 3.4mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS