VISHAY · FETs & Power MOSFETs · MPN SI4124DY-T1-E3
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| Gate Charge(Qg) | 77nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 20.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W;5.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.54nF |
40V 20.5A 3V 7.5mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS