VISHAY · FETs & Power MOSFETs · MPN SI4116DY-T1-E3
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| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 2.5W;5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 8.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.925nF |
25V 18A 1.4V 8.6mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS