VISHAY · FETs & Power MOSFETs · MPN SI4114DY-T1-E3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF |
| RDS(on) | 7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.7nF |
| Type | N-Channel |
20V 20A 2.1V 3.6W 7mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS