VISHAY · FETs & Power MOSFETs · MPN SI4103DY-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 44nC@4.5V |
| Output Capacitance(Coss) | 535pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 5.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 470pF |
| RDS(on) | 10.8mΩ@4.5V |
| Input Capacitance(Ciss) | 5.2nF |
| Type | P-Channel |
30V 16A 2V 5.2W 10.8mΩ@4.5V P-Channel SO-8 Single FETs, MOSFETs RoHS