VISHAY · FETs & Power MOSFETs · MPN SI4100DY-T1-GE3
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 6.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 6W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 84mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
N-Channel 100V 6.8A 6W Surface Mount SOIC-8