VISHAY SI4090DY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI4090DY-T1-GE3

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Specifications

Gate Charge(Qg)27.9nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)790pF
Current - Continuous Drain(Id)19.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.41nF
TypeN-Channel

Technical details

N-Channel 100V 19.7A 3.5W Surface Mount SO-8

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