VISHAY · FETs & Power MOSFETs · MPN SI4090BDY-T1-GE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 28nC@6V |
| Output Capacitance(Coss) | 250pF |
| Current - Continuous Drain(Id) | 18.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 11.3mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.57nF |
| Type | N-Channel |
100V 18.7A 4V 5W 11.3mΩ@6V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS