VISHAY · FETs & Power MOSFETs · MPN SI4062DY-T1-GE3
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| Gate Charge(Qg) | 18.8nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.265nF |
| Current - Continuous Drain(Id) | 32.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 7.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 6.9mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.175nF |
| Type | N-Channel |
60V 32.1A 2.6V 7.8W 6.9mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS