VISHAY SI3993CDV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3993CDV-T1-GE3

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Specifications

Current - Continuous Drain(Id)2.9A
RDS(on)188mΩ@4.5V
Pd - Power Dissipation1.4W
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)33pF
Number2 P-Channel
Input Capacitance(Ciss)210pF
Gate Charge(Qg)8nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)45pF

Technical details

2.9A 188mΩ@4.5V 1.4W 2.2V 2 P-Channel TSOP-6-1.5mm FET, MOSFET Arrays RoHS

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