VISHAY SI3932DV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3932DV-T1-GE3

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Specifications

Current - Continuous Drain(Id)3.7A
RDS(on)73mΩ@4.5V
Pd - Power Dissipation1.4W
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

3.7A 73mΩ@4.5V 1.4W 2.2V 2 N-Channel TSOP-6-1.5mm FET, MOSFET Arrays RoHS

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