VISHAY · FETs & Power MOSFETs · MPN SI3590DV-T1-GE3
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| Current - Continuous Drain(Id) | 3A |
|---|---|
| RDS(on) | 120mΩ@2.5V |
| Pd - Power Dissipation | 830mW |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 3nC@4.5V |
| Vgs | ±12V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 30V 3A Surface Mount TSOP-6