VISHAY · FETs & Power MOSFETs · MPN SI3585CDV-T1-GE3
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| Current - Continuous Drain(Id) | 2.1A |
|---|---|
| RDS(on) | 195mΩ@4.5V |
| Pd - Power Dissipation | 1.1W |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 210pF |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃ |
20V 2.1A 1.1W Surface Mount TSOP-6-6-1.5mm