VISHAY · FETs & Power MOSFETs · MPN SI3552DV-T1-E3
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| Gate Charge(Qg) | 2.1nC@10V;2.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 2.5A;1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.15W |
| RDS(on) | 105mΩ@10V;200mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 2.5A 1.8A 1.15W Surface Mount TSOP-6