VISHAY · FETs & Power MOSFETs · MPN SI3493DDV-T1-GE3
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| Gate Charge(Qg) | 19.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 52.2pF |
| RDS(on) | 24mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.825nF |
P-Channel 20V 7.5A Surface Mount TSOP-6