VISHAY · FETs & Power MOSFETs · MPN SI3493BDV-T1-GE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | - |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 2.08W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | - |
| Input Capacitance(Ciss) | - |
20V 400mV 2.08W TSOP-6-1.5mm Single FETs, MOSFETs RoHS