VISHAY · FETs & Power MOSFETs · MPN SI3493BDV-T1-BE3
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| Gate Charge(Qg) | 43.5nC@5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 7A;8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 2.08W;2.97W |
| Reverse Transfer Capacitance (Crss@Vds) | 245pF |
| RDS(on) | 27.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.805nF |
20V 400mV 27.5mΩ@4.5V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS