VISHAY SI3483DDV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3483DDV-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)14.5nC@10V
Output Capacitance(Coss)245pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)31.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)580pF
TypeP-Channel

Technical details

P-Channel 30V 8A 3W Surface Mount TSOP-6

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