VISHAY · FETs & Power MOSFETs · MPN SI3483DDV-T1-BE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 9.5nC@10V |
| Current - Continuous Drain(Id) | 6.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 31.2mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 580pF |
30V 6.4A 2.2V 2W 31.2mΩ@10V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS