VISHAY · FETs & Power MOSFETs · MPN SI3483CDV-T1-BE3
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6.1A;8A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | - |
| RDS(on) | 34mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1nF |
30V 1V 34mΩ@10V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS