VISHAY SI3476DV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3476DV-T1-GE3

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Specifications

Gate Charge(Qg)4.9nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)116pF
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.3W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)93mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)195pF
TypeN-Channel

Technical details

N-Channel 80V 4.6A 2.3W Surface Mount TSOP-6

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