VISHAY SI3476DV-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI3476DV-T1-BE3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)7.5nC@10V
Current - Continuous Drain(Id)3.5A;4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W;3.6W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)93mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)195pF

Technical details

80V 3V 93mΩ@10V 1 N-channel TSOP-6 Single FETs, MOSFETs RoHS

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