VISHAY SI3474DV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3474DV-T1-GE3

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Specifications

Gate Charge(Qg)10.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)3.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.33W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)189mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)196pF
TypeN-Channel

Technical details

N-Channel 100V 3.8A 2.33W Surface Mount TSOP-6

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