VISHAY · FETs & Power MOSFETs · MPN SI3473DDV-T1-GE3
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| Gate Charge(Qg) | 22.8nC |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 520pF |
| Current - Continuous Drain(Id) | 8.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 501pF |
| RDS(on) | 17.8mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.975nF |
| Vgs | ±8V |
12V 8.7A 1V 2W 17.8mΩ@4.5V 1 P-Channel P-Channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS