VISHAY · FETs & Power MOSFETs · MPN SI3469DV-T1-E3
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.8pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
20V 6.7A 1.3W Surface Mount TSOP-6