VISHAY SI3469DV-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI3469DV-T1-BE3

No reviews yet — be the first to review VISHAY SI3469DV-T1-BE3.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.14W
RDS(on)30mΩ@10V
Number1 P-Channel

Technical details

20V 1.14W 30mΩ@10V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs