VISHAY SI3464DV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3464DV-T1-GE3

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Specifications

Gate Charge(Qg)18nC@5V
Drain to Source Voltage20V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)30mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)1.065nF
TypeN-Channel

Technical details

N-Channel 20V 7.5A 1.3W Surface Mount TSOP-6

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