VISHAY · FETs & Power MOSFETs · MPN SI3464DV-T1-BE3
No reviews yet — be the first to review VISHAY SI3464DV-T1-BE3.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 7.5A;8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W;3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 24mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.065nF |
20V 1V 24mΩ@4.5V 1 N-channel TSOP-6 Single FETs, MOSFETs RoHS