VISHAY · FETs & Power MOSFETs · MPN SI3460DDV-T1-GE3
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| Gate Charge(Qg) | 6.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 28mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 666pF |
20V 6.2A 1V 1.7W 28mΩ@4.5V 1 N-channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS