VISHAY · FETs & Power MOSFETs · MPN SI3459BDV-T1-BE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 2.2A;2.9A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 216mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 350pF |
60V 1V 216mΩ@10V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS