VISHAY · FETs & Power MOSFETs · MPN SI3458BDV-T1-BE3
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 128mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel |
60V 4.1A 3V 2W 128mΩ@4.5V 1 N-channel N-Channel TSOP-6 Single FETs, MOSFETs RoHS