VISHAY SI3457CDV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3457CDV-T1-GE3

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Specifications

Gate Charge(Qg)5.1nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)5.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)113mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)450pF
TypeP-Channel

Technical details

P-Channel 30V 5.1A 3W Surface Mount TSOP-6

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