VISHAY SI3457CDV-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI3457CDV-T1-BE3

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)4.1A;5.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W;3W
RDS(on)74mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)450pF

Technical details

30V 1V 74mΩ@10V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS

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