VISHAY SI3456DDV-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI3456DDV-T1-GE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)6.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)50mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)325pF
TypeN-Channel

Technical details

N-Channel 30V 6.3A 2.7W Surface Mount TSOP-6

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