VISHAY · FETs & Power MOSFETs · MPN SI3456DDV-T1-E3
No reviews yet — be the first to review VISHAY SI3456DDV-T1-E3.
| Gate Charge(Qg) | 2.8nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 6.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 325pF |
30V 6.3A 3V 1.7W 1 N-channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS