VISHAY · FETs & Power MOSFETs · MPN SI3456DDV-T1-BE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5A;6.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.7W;2.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 325pF |
30V 1.2V 40mΩ@10V 1 N-channel TSOP-6 Single FETs, MOSFETs RoHS