VISHAY · FETs & Power MOSFETs · MPN SI3453DV-T1-GE3
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| Gate Charge(Qg) | 2.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 3.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 165mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 155pF |
30V 3.4A 1.2V 1.6W 165mΩ@10V 1 P-Channel TSOP-6-1.5mm Single FETs, MOSFETs RoHS