VISHAY · FETs & Power MOSFETs · MPN SI3443DDV-T1-GE3
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| Gate Charge(Qg) | 20nC@8V;9nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 111pF |
| RDS(on) | 39mΩ@4.5V;57mΩ@2.7V;64mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 970pF |
| Type | P-Channel |
P-Channel 20V 4A 2.7W Surface Mount TSOP-6