VISHAY · FETs & Power MOSFETs · MPN SI3443DDV-T1-BE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 30nC@8V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 1.7W;2.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 111pF |
| RDS(on) | 47mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 970pF |
20V 4A 600mV 47mΩ@4.5V 1 P-Channel TSOP-6 Single FETs, MOSFETs RoHS